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Neutron detection using boron gallium nitride semiconductor material

Author:
Atsumi, Katsuhiro   Inoue, Yoku   Mimura, Hidenori   Aoki, Toru   Nakano, Takayuki  


Journal:
APL Materials


Issue Date:
2014


Abstract(summary):

In this study, we developed a new neutron-detection device using a boron gallium nitride (BGaN) semiconductor in which the B atom acts as a neutron converter. BGaN and gallium nitride (GaN) samples were grown by metal organic vapor phase epitaxy, and their radiation detection properties were evaluated. GaN exhibited good sensitivity to alpha-rays but poor sensitivity to gamma-rays. Moreover, we confirmed that electrons were generated in the depletion layer under neutron irradiation. This resulted in a neutron-detection signal after alpha-rays were generated by the capture of neutrons by the B atoms. These results prove that BGaN is useful as a neutron-detecting semiconductor material.


Page:
032106


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