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Fabrication of a submicron source-drain gap for p–i–p field effect transistors using epitaxial diamond layers

Author:
Kawakami, N.   Yokota, Y.   Tachibana, T.   Hayashi, K.   Inoue, K.   Kobashi, K.  


Journal:
Diamond and Related Materials


Issue Date:
2004


Abstract(summary):

A p-i-p diamond field effect transistors (FETs), which consist of an epitaxial channel with submicron length, are fabricated. Two different fabrication processes to make p-i-p FETs are demonstrated, depending on how heavily B-doped diamond layers for source and drain are formed: ion implantation and selective deposition. The p-i-p FET is operated by the modulation of space charge limited current and featured a transconductance up to 9.1 mS/mm


Page:
1939-1943


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