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Impact of Single Charge Trapping on the Variability of Ultrascaled Planar and Trigate FDSOI MOSFETs: Experiment Versus Simulation

Author:
Subirats, Alexandre   Garros, Xavier   Husseini, Joanna El   Royer, Cyrille Le   Reimbold, Gilles   Ghibaudo, Gerard  


Journal:
IEEE Transactions on Electron Devices


Issue Date:
2013


Abstract(summary):

The impact of single charge trapping on the threshold voltage V-t of ultrascaled fully depleted silicon-on-insulator transistors is investigated through dynamic variability measurements and 3-D electrostatic simulations. In these undoped Si channel devices, V-t shifts induced by individual trapping events are exponentially distributed with distribution tail similarly as in BULK devices. This typical dependence is explained by the high sensitivity of V-t-with a bell-like shape-on the position of the trap over the channel. The tail, on the other hand, is attributed to defects in the buried oxide. Finally, device scaling is showed to increase dynamic V-t variability. In particular, the impact of a single charge on V-t is found to scale with the inverse of the device area.


Page:
2604-2610


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