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Toward Discrete Axialp–nJunction Nanowire Light-Emitting Diodes Grown by Plasma-Assisted Molecular Beam Epitaxy

Author:
Matt D. Brubaker   Paul T. Blanchard   John B. Schlager…  


Journal:
Journal of Electronic Materials


Issue Date:
2013


Abstract(summary):

In this paper we investigate axial p- n junction GaN nanowires grown by plasma-assisted molecular beam epitaxy (MBE), with particular attention to the effect of Mg doping on the device characteristics of individual nanowire light-emitting diodes (LEDs). We observe that a significant fraction of single-nanowire LEDs produce measurable band-gap electroluminescence when a thin AlGaN electron blocking layer (EBL) is incorporated into the device structure near the junction. Similar devices with no EBL typically yield below-detection-limit electroluminescence, despite diode-like I- V characteristics and optically measured internal quantum efficiencies (IQEs) of ~1%. I- V measurements of the p-regions in p- n junction nanowires, as well as nanowires doped with Mg only, indicate low p-type conductivity and asymmetric Schottky-like p-contacts. These observations suggest that imbalanced carrier injection from the junction and p-contact can produce significant nonradiative losses.


Page:
868-874


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