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Epitaxy of gallium nitride in semi-polar direction on Si(210) substrate

Author:
V. N. Bessolov   E. V. Konenkova   S. A. Kukushkin…  


Journal:
Technical Physics Letters


Issue Date:
2013


Abstract(summary):

The idea of a new method for growing gallium nitride (GaN) epilayers in semi-polar direction by hydride-chloride vapor-phase epitaxy (HVPE) is disclosed. We propose to use Si(210) substrates with the first buffer layer of silicon carbide (3C-SiC) and the second buffer layer of aluminum nitride (AlN). It is experimentally demonstrated for the first time that, under conditions of anisotropic deformation in the GaN/AlN/3C-SiC/Si(210) structure, a GaN epilayer exhibits growth in semi-polar directions.


Page:
274-276


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