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Gallium nitride as a material for spintronics

Author:
Khludkov, S. S.   Prudaev, I. A.   Тоlbanov, О. P.  


Journal:
Russian Physics Journal


Issue Date:
2013


Abstract(summary):

The literature on the magnetic properties of GaN doped with magnetic impurities: the transition metals (Mn, Cr, Fe, Ni, and V) and rare earth elements (Gd, Eu, and Sm), as well as gallium nitride containing high concentration of gallium vacancies and quantum dots is reviewed. The properties of GaN doped by ion implantation and during the MBE and MOVPE growth of layers are considered. The undoped GaN and GaN films doped with the transition metals and rare earth elements often retain ferromagnetic properties at room temperature.


Page:
903-909


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