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Fabrication of Bulk-Si FinFET using CMOS compatible process

Author:
Huajie Zhou   Yi Song   Qiuxia Xu   Yongliang Li   Huaxiang Yin  


Journal:
Microelectronic Engineering


Issue Date:
2012


Abstract(summary):

A new CMOS (Complementary Metal Oxide Semiconductor) compatible Bulk-Si FinFETs fabrication process has been proposed. Compared with conventional fabrication processes of SOI (Silicon On Insulator) and Bulk-Si FinFETs, this new approach is of low cost and simple. High performance CMOS Bulk-Si FinFETs, the fin isolated to Si substrate by oxide, have been fabricated using this new approach. With lower body doping concentration (1 × 15 cm?), PMOS shows Ion/Ioff ratio of 104 and short channel behavior with a subthreshold swing (SS) of 280 mV/dec, a DIBL (Drain Induced Barrier Lowering) value of 258 mV/V. NMOS device, with the body doping concentration up to 1 × 17 cm?, shows an Ion/Ioff ratio larger than 107 and SS = 86 mV/dec and DIBL = 28 mV/V.


Page:
26-28


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