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Gallium nitride nanowires doped with magnesium

Author:
Dongdong Zhang   Chengshan Xue   Huizhao Zhuang   Haibo Sun   Yuping Cao   Yinglong Huang   Zouping Wang   Ying Wang   Yongfu Guo  


Journal:
Materials Letters


Issue Date:
2009


Abstract(summary):

GaN nanowires doped with Mg have been synthesized on Si (111) substrate through ammoniating Ga 2O 3 films doped with Mg under flowing ammonia atmosphere. The Mg-doped GaN nanowires were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), high-resolution transmission electron microscopy (HRTEM) and photoluminescence (PL). The results demonstrate that the nanowires were single crystalline with hexagonal wurzite structure. The diameters of the nanowires ranged 20-30 nm and the lengths were about hundreds of micrometers. The intense PL peak at 359 nm showed a blueshift from the bulk band gap emission, attributed to Burstein-Moss effect. The growth mechanism of the crystalline GaN nanowires is discussed briefly. [All rights reserved Elsevier].


Page:
978-981


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