Reduction of deep level defects in unintentionally doped 4H-SiC homo-epilayers by ion implantation

Author:

Renxu Jia 贾仁需   Yuming Zhang 张玉明   Yimen Zhang  

Journal:

Journal of Wuhan University of Technology - Materials Science Edition

Issue Date:

2012

Abstract(summary):

In order to reduce deep level defects, the theory and process design of 4H-SiC homoepitaxial layer implanted by carbon ion are studied. With the Monte Carlo simulator TRIM, the ion implantation range, location of peak concentration and longitudinal straggling of carbon are calculated. The process for improving deep energy level in undoped 4H-SiC homoepitaxial layer by three times carbon ion-implantation is proposed, including implantation energy, dose, the SiO 2 resist mask, annealing temperature, annealing time and annealing protection. The deep energy level in 4H-SiC material can be significantly improved by implantation of carbon atoms into a shallow surface layer. The damage of crystal lattice can be repaired well, and the carbon ions are effectively activated after 1 600degC annealing, meanwhile, deep level defects are decreased.

Page:

415-417