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Magnetoresistance effect in a hybrid ferromagnetic/semiconductor nanostructure

Author:
Mao-Wang Lu   Guo-Jian Yang  


Journal:
Solid State Communications


Issue Date:
2007


Abstract(summary):

We propose a Magnetoresistance device in a magnetically modulated two-dimensional electron gas, which can be realized experimentally by the deposition of two parallel ferromagnetic strips on the top and bottom of a semiconductor heterostructure. It is shown that there exists a significant transmission difference for electrons through the parallel and antiparallel magnetization configurations of such a device, which leads to a considerable magnetoresistance effect. It is also shown that the magnetoresistance ratio of the device depends greatly on the magnetic strength difference in the two delta barriers of the system. [All rights reserved Elsevier]


Page:
248-251


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