The goal of this research is to investigate the correlation of reverse characteristics of Schottky barrier diodes (SBDs) and surface morphological defects on 4deg (off-axis) carbon (C) face, 4deg and 8deg silicon (Si) face 4 H-SiC. Different dimensions of SBDs with boron-implanted edge terminations are fabricated on 4degC-face, 4deg and 8deg Si-face 4 H-SiC samples. The ideality factor for these three samples is about 1.1. Average breakdown voltages of 4deg Si-face 4 H-SiC SBDs are higher than the other two samples, particularly for large size SBDs. Breakdown voltages of 1500 and 2000 mum 4deg Si-face SBDs can reach over 1000 V. This value is about two times higher than the other two samples, though the root-mean-square (RMS) roughness of 4deg Si-face samples obtained from atomic force microscopy (AFM) is 3.5 nm. The yield of 1500 and 2000 mum 4deg Si-face 4 H-SiC SBDs with a breakdown voltage over 1000 V is more than 50%, much higher than the other two samples.
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