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Controlled Nucleation of GaN Nanowires Grown with Molecular Beam Epitaxy

Author:
Kris A. Bertness   Aric W. Sanders   Devin M. Rourke   Todd E. Harvey   Alexana Roshko   John B. Schlager   Norman A. Sanford  


Journal:
Advanced Functional Materials


Issue Date:
2010


Abstract(summary):

The location of GaN nanowires is controlled with essentially perfect selectivity using patterned SiN x prior to molecular beam epitaxy growth. Nanowire growth is uniform within mask openings and absent on the mask surface for over 95% of the usable area of a 76 mm diameter substrate. The diameters of the resulting nanowires are controlled by the size of the mask openings. Openings of approximately 500 nm or less produce single nanowires with symmetrically faceted tips.


Page:
2911-2915


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