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Self-assembled InGaAs/GaAs quantum dot photodetector on germanium substrate

Author:
Sreetama Banerjee  Nilanjan Halder and Subhananda Chakrabarti  


Journal:
physica status solidi (c)


Issue Date:
2012


Abstract(summary):

We are reporting the growth of 30 layer self-assembled InGaAs/GaAs quantum dot infrared photodetector (QDIP) structures on Ge substrate where a proper interface formation procedure was followed to minimise the defect density at the GaAs/Ge interface. The interface formation technique includes deposition of a migration enhanced epitaxy (MEE) grown GaAs layer followed by deposition of a thin GaAs layer grown with multiple annealing steps in between. The structural and optical properties of the heterostructure are evaluated by Transmission Electron Microscopy (TEM) and Photoluminescence (PL). The I-V curve for the grown device structure has been demonstrated. (


Page:
322-325


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