Creat membership Creat membership
Sign in

Forgot password?

Confirm
  • Forgot password?
    Sign Up
  • Confirm
    Sign In
Creat membership Creat membership
Sign in

Forgot password?

Confirm
  • Forgot password?
    Sign Up
  • Confirm
    Sign In
Collection

toTop

If you have any feedback, Please follow the official account to submit feedback.

Turn on your phone and scan

home > search >

Work function engineered charge plasma diodes for enhanced performance

Author:
Preeti Singh   Sujata Pandey  


Journal:
Journal of Physics D: Applied Physics


Issue Date:
2015


Abstract(summary):

Dopingless devices have shown significant improvement over doped devices in terms of doping fluctuations and thermal dependency. In this paper we designed and simulated dopingless/charge plasma diodes where the diode action is implemented by creating a charge plasma under the metal contacts. Two different gate metals or metal silicides are chosen having a work function different from that of the underlying thin silicon body. The gates are separated by a dielectric layer. Several gate combinations are chosen for the diode and performance is evaluated under variation in different process parameters. Good rectifying properties are obtained along with thermal stability of the device. High ON current of 10−8 A μm−1 is obtained for a 20 nm thick device. The simulated results are compared with experimental data and show good agreement.


Similar Literature

Submit Feedback

This function is a member function, members do not limit the number of downloads