Creat membership Creat membership
Sign in

Forgot password?

Confirm
  • Forgot password?
    Sign Up
  • Confirm
    Sign In
Creat membership Creat membership
Sign in

Forgot password?

Confirm
  • Forgot password?
    Sign Up
  • Confirm
    Sign In
Collection
For ¥0.57 per day, unlimited downloads CREATE MEMBERSHIP Download

toTop

If you have any feedback, Please follow the official account to submit feedback.

Turn on your phone and scan

home > search >

Current transport mechanism in a metal–GaN nanowire Schottky diode

Author:
Seung-Yong Lee   Sang-Kwon Lee  


Journal:
Nanotechnology


Issue Date:
2007


Abstract(summary):

We investigated nano-Schottky diodes of gallium nitride nanowires with three Schottkymetals (Cr, Ti, and Au) using current–voltage characteristics. All of the GaNnano-Schottky diodes showed a rectifying behavior. The abnormal electrical characteristicsof a single GaN nanowire Schottky diode can be explained by a thermionic-field emissionand an enhancement of the tunneling effects owing to both the relatively highconcentration of the GaN nanowire itself and the nanoscale junction size of the GaNnanowire Schottky diodes.


Page:
495701 (4pp)


VIEW PDF

The preview is over

If you wish to continue, please create your membership or download this.

Create Membership

Similar Literature

Submit Feedback

This function is a member function, members do not limit the number of downloads