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Effective n-type doping strategy through codoping Si-Al-F-N in aluminum nitride

Author:
Wang, Zhiguo  Li, Jingbo  Fu, Yong Qing  


Journal:
APPLIED PHYSICS EXPRESS


Issue Date:
2014


Abstract(summary):

Using a first-principles pseudopotential method, we studied an effective n-type doping strategy through codoping Si-Al-X-N (X = F, Cl, Br, and I) in aluminum nitride. Results revealed that the donor ionization energy of the Si-Al-X-N complex is much lower than that of the corresponding isolated SiAl impurity. Theoretically obtained epsilon(+/0) ionization energies are all near the conduction band minimum (CBM), which is only 1.4 meV below the CBM of the Si-Al-F-N pair. The low epsilon(+/0) ionization energy of the Si-Al-X-N complex can be explained by the combined repulsion between the X element (X = F, Cl, Br, and I)- and Si donor-induced levels. (C) 2014 The Japan Society of Applied Physics


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