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Effects of hydrogen impurities on Ge(1-x)Mn(x) semiconductors

Author:
Wang, X. L.  Ni, M. Y.  Zeng, Z.  Lin, H. Q.  


Journal:
EPL


Issue Date:
2009


Abstract(summary):

The structural and magnetic properties of hydrogen-doped Ge(1-x)Mn(x) diluted magnetic semiconductors are investigated using a first-principles pseudopotential method. Our results show that hydrogen impurities intend to bond to Mn ions in the Mn-doped Ge system and strongly influence the magnetic properties of this system. Hydrogen impurities actually reduce the Curie temperature of this system and might be one of the reasons for the existence of paramagnetic samples of Ge(1-x)Mn(x). Alternatively, hydrogenation can provide an easy and nonvolatile way to control and pattern the ferromagnetic properties of Mn-doped Ge diluted magnetic semiconductors, which has been achieved in the Mn-doped GaAs system (GOENNENWEIN S. T. B. et al., Phys. Rev. Lett., 92 (2004) 227202). Copyright (C) EPLA, 2009


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