Effect of the miscut direction in (111) 3C-SiC film growth on off-axis (111)Si RID C-9940-2010

Author:

Severino, A.  Camarda, M.  Condorelli, G.  Perdicaro, L. M. S.  Anzalone, R.  Mauceri, M.  La Magna, A.  La Via, F.  

Journal:

APPLIED PHYSICS LETTERS

Issue Date:

2009

Abstract(summary):

Two miscut directions of (111) Si substrate on 3C-SiC heteroepitaxial growth have been studied with the resulting 3C-SiC stress and defects as a function of miscut axis direction toward [110] and [112] of (111) Si analyzed. We studied this dependency from an experimental point of view, investigating the structural properties of 3C-SiC, and using a kinetic Monte Carlo method on superlattice to confirm our experimental findings with numerical simulations. Residual stress and stacking fault density were halved by growing on a (111) Si substrate off-cut toward the [110] direction. A different surface morphology was revealed between the two inclinations.