Creat membership Creat membership
Sign in

Forgot password?

Confirm
  • Forgot password?
    Sign Up
  • Confirm
    Sign In
Creat membership Creat membership
Sign in

Forgot password?

Confirm
  • Forgot password?
    Sign Up
  • Confirm
    Sign In
Collection
For ¥0.57 per day, unlimited downloads CREATE MEMBERSHIP Download

toTop

If you have any feedback, Please follow the official account to submit feedback.

Turn on your phone and scan

home > search >

Journal:
Proceedings of the SPIE - The International Society for Optical Engineering


Issue Date:
2004


Abstract(summary):

A novel high-resolution mask inspection platform using DUV wavelength has been developed. This platform is designed to enable the defect inspection of high quality masks for 65nm node used in 193nm lithography. In this paper, newly developed optical system and its performance are reported. The system is operated at wavelength of 198.5nm, which wavelength is nearly equal to 193nm-ArF laser exposure tool. Some defect image data and defect inspection sensitivity due to simulation-base die-to-die (D/D) inspection are shown on standard programmed defect test mask. As an initial state D/D inspection performance, 20-60 nm defects are certified. System capabilities for 65nm node inspection and beyond are also discussed


Page:
1011---10231023


VIEW PDF

The preview is over

If you wish to continue, please create your membership or download this.

Create Membership

Similar Literature

Submit Feedback

This function is a member function, members do not limit the number of downloads