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Magnetic field and pressure effects on the electrical resistivity of single crystal Pr 2/3(Ca,Pb) 1/3MnO 3

Journal:
Journal of Electroceramics


Issue Date:
1999


Abstract(summary):

The effects of magnetic field (H) and pressure (P) on the temperature (T) dependence of electrical resistivity (rho) are reported for a new manganese-containing compound, Pr 2/3(Ca,Pb) 1/3MnO 3, which was grown in single-crystal form by a flux method. The material was found to order magnetically with applied-field strength below 175 K, but have zero remanence (M R) as Hrarr0, i.e., there was no spontaneous magnetization (M S), only field-induced magnetization (M i ). A zero-field ldquoinsulatorrdquo to metal transition occurred at 146 K and this transition temperature (T IM) was found to increase with increasing field strength. The change in resistivity with field, rho 0-rho H, normalized with respect to rho H, was 900% at 146 K and H=5 T. On application of hydrostatic pressure the zero-field resistivity decreased by 200%/GPa above room temperature. The electrical transport observed was consistent with a thermally-activated process, and this process was found to be relatively independent of pressure (0-4 GPa) in the temperature region (300 K-400 K) studied


Page:
225---232232


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