Forgot password?

Wechat
Email
Sign Up

Use Wechat scan code to follow the official account directly sign in

Sweep WeChat yards

Use Wechat scan code to follow the official account directly sign in

the Qr Code is useless
Refresh

Use Wechat scan code to follow the official account directly sign in

Waiting for the show Qr Code...
Forgot password?

Sign Up
Confirm

Agreement onAcademic agreement

Sign In

home > search >

Phosphorescent Light-Emitting Transistors: Harvesting Triplet Excitons

Author:: Namdas, Ebinazar B. Hsu, Ben B. Y. Liu, Zehua Lo, Shih-Chun Burn, Paul L. Samuel, Ifor D. W.
Journal:: ADVANCED MATERIALS
Issue Date:: 2009
Abstract(summary):: Phosphorescent light-emitting transistors, in which light emission from singlet and triplet energy levels is harvested using solution-processed materials (see figure), are presented. While a green phosphorescent dendrimer exhibits an external quantum efficiency of 0.45% at 480 cd m(-2), a red polymer/phosphorescent small-molecule blend produces a brightness exceeding 30 cd m(-2) with a relatively high hole mobility of 2.5 x 10(-2) cm(2) V(-1) s(-1).
Page:: 4957---+

VIEW PDF

The preview is over

If you wish to continue, please create your membership or download this.

Create Membership

References

Lo, SC, Namdas, EB, Burn, PL, Samuel, IDW. Synthesis and properties of highly efficient electroluminescent green phosphorescent iridium cored dendrimers RID B-4369-2010 RID F-5849-2010 RID F-5347-2010[J]. MACROMOLECULES,2003:9721---9730.
Namdas, EB, Ruseckas, A, Samuel, IDW, Lo, SC, Burn, PL. Photophysics of Fac-tris(2-phenylpyridine) iridium(III) cored electroluminescent dendrimers in solution and films RID F-5849-2010 RID A-6323-2009 RID B-4369-2010 RID F-5347-2010[J]. JOURNAL OF PHYSICAL CHEMISTRY B,2004:1570---1577.
Markham, JPJ, Samuel, IDW, Lo, SC, Burn, PL, Weiter, M, Bassler, H. Charge transport in highly efficient iridium cored electrophosphorescent dendrimers RID B-4369-2010 RID F-5347-2010[J]. JOURNAL OF APPLIED PHYSICS,2004:438---445.
Rost, C, Karg, S, Riess, W, Loi, MA, Murgia, M, Muccini, M. Ambipolar light-emitting organic field-effect transistor[J]. APPLIED PHYSICS LETTERS,2004:1613---1615.
Sakanoue, T, Fujiwara, E, Yamada, R, Tada, H. Visible light emission from polymer-based field-effect transistors RID A-2878-2012[J]. APPLIED PHYSICS LETTERS,2004:3037---3039.
Swensen, JS, Soci, C, Heeger, AJ. Light emission from an ambipolar semiconducting polymer field-effect transistor RID A-8355-2008[J]. APPLIED PHYSICS LETTERS,2005
Zaumseil, J, Friend, RH, Sirringhaus, H. Spatial control of the recombination zone in an ambipolar light-emitting organic transistor[J]. NATURE MATERIALS,2006:69---74.
Loi, MA, Rost-Bietsch, C, Murgia, M, Karg, S, Riess, W, Muccini, M. Tuning optoelectronic properties of ambipolar organic light-emitting transistors using a bulk-heterojunction approach[J]. ADVANCED FUNCTIONAL MATERIALS,2006:41---47.
Dinelli, F, Capelli, R, Loi, MA, Murgia, M, Muccini, M, Facchetti, A, Marks, TJ. High-mobility ambipolar transport in organic light-emitting transistors RID C-2511-2009[J]. ADVANCED MATERIALS,2006:1416---+.
Muccini, Michele. A bright future for organic field-effect transistors[J]. NATURE MATERIALS,2006:605---613.

Cited By

Forgot password?

Forgot password?

Phosphorescent Light-Emitting Transistors: Harvesting Triplet Excitons

VIEW PDF

Similar Literature

Submit Feedback

Payment method:Overseas users please pay with PayPal