Creat membership Creat membership
Sign in

Forgot password?

Confirm
  • Forgot password?
    Sign Up
  • Confirm
    Sign In
Creat membership Creat membership
Sign in

Forgot password?

Confirm
  • Forgot password?
    Sign Up
  • Confirm
    Sign In
Collection
For ¥0.57 per day, unlimited downloads CREATE MEMBERSHIP Download

toTop

If you have any feedback, Please follow the official account to submit feedback.

Turn on your phone and scan

home > search >

Randomly packed n-SnO(2) nanorods/p-SiC heterojunction light-emitting diodes RID A-3885-2010 RID A-2662-2010

Author:
Yang, H. Y.  Yu, S. F.  Cheng, C. W.  Tsang, S. H.  Liang, H. K.  Fan, H. J.  


Journal:
APPLIED PHYSICS LETTERS


Issue Date:
2009


Abstract(summary):

A layer of randomly packed n-SnO(2) nanorods is grown by vapor transport method on the p-SiC(4H) substrate to realize heterojunction light-emitting diodes. Diodelike rectifying current-voltage characteristics, with a turn-on voltage of similar to 4.5 V and reverse leakage current density of < 0.25 A/m(2), are obtained at room temperature. Furthermore, electroluminescent spectra with emission peaks at around 395, 434, and 497 nm are observed from the heterojunction under forward bias. This is due to the relaxation of electrons in the conduction band of SnO(2) to the surface defect states and subsequent radiative recombination with holes injected from the p-SiC substrate.


VIEW PDF

The preview is over

If you wish to continue, please create your membership or download this.

Create Membership

Similar Literature

Submit Feedback

This function is a member function, members do not limit the number of downloads