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A 474 GHz HBV Frequency Quintupler Integrated on a 20 mu m Thick Silicon Substrate

Author:
Malko, Aleksandra  Bryllert, Tomas  Vukusic, Josip  Stake, Jan  


Journal:
IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY


Issue Date:
2015


Abstract(summary):

We present a silicon integrated Heterostructure Barrier Varactor (HBV) frequency quintupler (x5) operating between 440 GHz and 490 GHz. By epitaxial transfer of InP-based HBV material structure onto silicon-on-insulator (SOI), a uniform and accurate thickness (20 mu m) of the frequency quintupler chip is achieved. In a single stage this device delivers 2.8 mW of output power at 474 GHz, when pumped with 400 mW at 94.75 GHz, corresponding to conversion efficiency of 0.75%. The present device exhibits a 3-dB bandwidth of 4%.


Page:
85---91


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