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Study of the degradation of the external quantum efficiency of UV LEDs based on AlGaN/GaN heterostructures grown by chloride-hydride vapor-phase epitaxy

Author:
Shmidt, N. M.  Usikov, A. S.  Shabunina, E. I.  Chernyakov, A. E.  Sakharov, A. V.  Kurin, S. Yu.  Antipov, A. A.  Barash, I. S.  Roenkov, A. D.  Makarov, Yu. N.  Helava, H.  


Journal:
TECHNICAL PHYSICS LETTERS


Issue Date:
2014


Abstract(summary):

Final stage of the degradation of the external quantum efficiency of AlGaN/GaN UV light-emitting diodes (LEDs), grown by chloride-hydride vapor-phase epitaxy, and high-power InGaN/GaN blue LEDs, produced by metal-organic vapor-phase epitaxy, has been comparatively studied. It is shown that one of these processes leading to a decrease in the quantum efficiency for both types of LEDs is the local defect formation involving the Gold-Weisberg mechanism in a system of extended defects. To prolong the service life of AlGaN/GaN UV LEDs to more than 2000 h, it is necessary to improve the nanostructural arrangement of the material of light-emitting structures and determine the contribution from the AlGaN composition disorder to the degradation of the external quantum efficiency.


Page:
574---577


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