AlN was directly grown on a sapphire substrate by the solution growth method with the Cu-Si-Al-Ti solvent under a nitrogen gas flow. X-ray diffraction measurements revealed that the grown AlN was single crystal. The AlN layer was epitaxially formed on the sapphire substrate with the orientation relationships: (0001)(AlN) parallel to (0001)(sapphire) and [(1) over bar 100](AlN) parallel to [<(1over bar>120](sapphire). The full widths at half maximum (FWHMs) of X-ray rocking curves for tilt and twist components were 414 and 2031 arcsec, respectively. (C) 2013 The Japan Society of Applied Physics