Creat membership Creat membership
Sign in

Forgot password?

Confirm
  • Forgot password?
    Sign Up
  • Confirm
    Sign In
Creat membership Creat membership
Sign in

Forgot password?

Confirm
  • Forgot password?
    Sign Up
  • Confirm
    Sign In
Collection
For ¥0.57 per day, unlimited downloads CREATE MEMBERSHIP Download

toTop

If you have any feedback, Please follow the official account to submit feedback.

Turn on your phone and scan

home > search >

Junctionless Tunnel Field Effect Transistor

Author:
Ghosh, Bahniman  Akram, Mohammad Waseem  


Journal:
IEEE ELECTRON DEVICE LETTERS


Issue Date:
2013


Abstract(summary):

In this letter, a double-gate junctionless tunnel field effect transistor (JL-TFET) is proposed and investigated. The JL-TFET is a Si-channel heavily n-type-doped junctionless field effect transistor (JLFET), which uses two isolated gates (Control-Gate, P-Gate) with two different metal work-functions to behave like a tunnel field effect transistor (TFET). In this structure, the advantages of JLFET and TFET are combined together. The simulation results of JL-TFET with high-k dielectric material (TiO2) of 20-nm gate length shows excellent characteristics with high I-ON/I-OFF ratio (similar to 6 x 10(8)), a point subthreshold slope (SS) of similar to 38 mV/decade, and an average SS of similar to 70 mV/decade at room temperature, which indicates that JL-TFET is a promising candidate for a switching performance.


Page:
584---586


VIEW PDF

The preview is over

If you wish to continue, please create your membership or download this.

Create Membership

Similar Literature

Submit Feedback

This function is a member function, members do not limit the number of downloads