Creat membership Creat membership
Sign in

Forgot password?

Confirm
  • Forgot password?
    Sign Up
  • Confirm
    Sign In
Creat membership Creat membership
Sign in

Forgot password?

Confirm
  • Forgot password?
    Sign Up
  • Confirm
    Sign In
Collection

toTop

If you have any feedback, Please follow the official account to submit feedback.

Turn on your phone and scan

home > search >

Raman Scattering and Carrier Diffusion Study in Heavily Co-doped 6H-SiC Layers

Author:
Gulbinas, K.  Scajev, P.  Bikbajavas, V.  Grivickas, V.  Korolik, O. V.  Mazanik, A. V.  Fedotov, A. K.  Jokubavicius, V.  Linnarsson, M. K.  Syvajarvi, M.  Kamiyama, S.  


Journal:
EMRS 2013 SPRING MEETING, SYMPOSIUM G: ALTERNATIVE APPROACHES OF SIC AND RELATED WIDE BANDGAP MATERIALS IN LIGHT EMITTING AND SOLAR CELL APPLICATIONS


Issue Date:
2014


Abstract(summary):

Thick 6H-SiC epilayers were grown using the fast sublimation method on low-off-axis substrates. They were co-doped with N and B impurities of approximate to 10(19) cm(-3) and (4.10(16)-5.10(18)) cm(-3) concentration, respectively. The epilayers exhibited donor-acceptor pair (DAP) photoluminescence. The micro-Raman spectroscopic study exposed a compensated n-6H-SiC epilayer of common quality with some 3C-SiC inclusions. The compensation ratio of B through 200 mu m thick epilayer varied in 20-30% range. The free carrier diffusivity was studied by transient grating technique at high injection level. The determined ambipolar diffusion coefficient at RT was found to decrease from 1.15 cm(2)/s to virtually 0 cm(2)/s with boron concentration increasing by two orders.


Similar Literature

Submit Feedback

This function is a member function, members do not limit the number of downloads