EMRS 2013 SPRING MEETING, SYMPOSIUM G: ALTERNATIVE APPROACHES OF SIC AND RELATED WIDE BANDGAP MATERIALS IN LIGHT EMITTING AND SOLAR CELL APPLICATIONS
Issue Date:
2014
Abstract(summary):
Thick 6H-SiC epilayers were grown using the fast sublimation method on low-off-axis substrates. They were co-doped with N and B impurities of approximate to 10(19) cm(-3) and (4.10(16)-5.10(18)) cm(-3) concentration, respectively. The epilayers exhibited donor-acceptor pair (DAP) photoluminescence. The micro-Raman spectroscopic study exposed a compensated n-6H-SiC epilayer of common quality with some 3C-SiC inclusions. The compensation ratio of B through 200 mu m thick epilayer varied in 20-30% range. The free carrier diffusivity was studied by transient grating technique at high injection level. The determined ambipolar diffusion coefficient at RT was found to decrease from 1.15 cm(2)/s to virtually 0 cm(2)/s with boron concentration increasing by two orders.