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Epitaxy of semipolar GaN on a Si(001) substrate with a SiC buffer layer

Author:
Bessolov, V. N.  Konenkova, E. V.  Kukushkin, S. A.  Myasoedov, A. V.  Osipov, A. V.  Rodin, S. N.  Shcheglov, M. P.  Feoktistov, N. A.  


Journal:
TECHNICAL PHYSICS LETTERS


Issue Date:
2014


Abstract(summary):

A new method of synthesis of semipolar gallium nitride on a silicon substrate using the technology of solid-phase epitaxy of 3C-SiC nanocrystals has been suggested. It has been demonstrated that application of buffer layers of 3C-SiC and AlN enables one to form epitaxial layers of semipolar gallium nitride with layer deviation from the polar position of the c axis of a wurtzite crystal by an angle of 48A degrees-51A degrees at the minimal half-width of the X-ray diffraction rocking curve (omega(theta)) similar to 24'. The observed bend of a cylindrical character in the structure of GaN/AlN/3C-SiC(001) is explained by the anisotropic deformation of semipolar GaN on silicon.


Page:
386---388


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