A new method of synthesis of semipolar gallium nitride on a silicon substrate using the technology of solid-phase epitaxy of 3C-SiC nanocrystals has been suggested. It has been demonstrated that application of buffer layers of 3C-SiC and AlN enables one to form epitaxial layers of semipolar gallium nitride with layer deviation from the polar position of the c axis of a wurtzite crystal by an angle of 48A degrees-51A degrees at the minimal half-width of the X-ray diffraction rocking curve (omega(theta)) similar to 24'. The observed bend of a cylindrical character in the structure of GaN/AlN/3C-SiC(001) is explained by the anisotropic deformation of semipolar GaN on silicon.