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Wavelength-Tuned Light Emission via Modifying the Band Edge Symmetry: Doped SnO2 as an Example

Author:
Zhou, Hang  Deng, Rui  Li, Yong-Feng  Yao, Bin  Ding, Zhan-Hui  Wang, Qing-Xiao  Han, Yu  Wu, Tom  Liu, Lei  


Journal:
JOURNAL OF PHYSICAL CHEMISTRY C


Issue Date:
2014


Abstract(summary):

We report the observation of ultraviolet photoluminescence and electroluminescence in indium-doped SnO2 thin films with modified "forbidden" bandgap. With increasing indium concentration in SnO2, dominant visible light emission evolves into the ultraviolet regime in photoluminescence. Hybrid functional first-principles calculations demonstrate that the complex of indium dopant and oxygen vacancy breaks "forbidden" band gap to form allowed transition states. Furthermore, undoped and 10% indium-doped SnO2 layers are synthesized on p-type GaN substrates to obtain SnO2-based heterojunction light-emitting diodes. A dominant visible emission band is observed in the undoped SnO2-based heterojunction, whereas strong near-ultraviolet emission peak at 398 nm is observed in the indium-doped SnO2-based heterojunction. Our results demonstrate an unprecedented doping-based approach toward tailoring the symmetry of band edge states and recovering ultraviolet light emission in wide-bandgap oxides.


Page:
6365---6371


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