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Polarization of Photoluminescence from Partial Dislocations in 4H-SiC

Author:
Hirano, Rii  Tsuchida, Hidekazu  Tajima, Michio  Itoh, Kohei M.  Maeda, Koji  


Journal:
APPLIED PHYSICS EXPRESS


Issue Date:
2013


Abstract(summary):

Polarization characteristics of luminescence from partial dislocations (PDs) in 4H-SiC have been investigated by room-temperature photoluminescence (PL) imaging. The PLs from mobile PDs under optical excitation, which are 30 degrees-Si(g) PDs, and PDs tilted by 6 degrees from their Burgers vector (6 degrees-PDs) were found to be polarized perpendicular to their dislocation lines. In contrast, the PL from immobile 30 degrees-C(g) PDs was not polarized. The present results suggest that the carriers bound to the 30 degrees-Si(g) and 6 degrees-PDs have anisotropic wave functions and those bound to 30 degrees-C(g) PDs have isotropic wave functions. (C) 2013 The Japan Society of Applied Physics


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