Creat membership Creat membership
Sign in

Forgot password?

Confirm
  • Forgot password?
    Sign Up
  • Confirm
    Sign In
Creat membership Creat membership
Sign in

Forgot password?

Confirm
  • Forgot password?
    Sign Up
  • Confirm
    Sign In
Collection
For ¥0.57 per day, unlimited downloads CREATE MEMBERSHIP Download

toTop

If you have any feedback, Please follow the official account to submit feedback.

Turn on your phone and scan

home > search >

Epitaxy of gallium nitride in semi-polar direction on silicon

Author:
Bessolov, V. N.  Zhilyaev, Yu. V.  Konenkova, E. V.  Poletaev, N. K.  Sharofidinov, Sh.  Shcheglov, M. P.  


Journal:
TECHNICAL PHYSICS LETTERS


Issue Date:
2012


Abstract(summary):

The idea of a new method for growing gallium nitride (GaN) epilayers on (100)-oriented silicon substrates is disclosed. It has been experimentally established that the formation of a special oriented thin (600 nm) buffer layer of aluminum nitride (AlN) by hydride-chloride vapor-phase epitaxy (HVPE) makes possible the growth of GaN in semi-polar direction. For the best epilayers obtained by this method, the X-ray rocking curve half-width is omega(theta)(0004) = 30 arcmin. The photoluminescence spectra of GaN films measured at 77 K exhibit both exciton and donor-acceptor recombination bands.


Page:
9---11


VIEW PDF

The preview is over

If you wish to continue, please create your membership or download this.

Create Membership

Similar Literature

Submit Feedback

This function is a member function, members do not limit the number of downloads