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Silicon optical modulator with integrated grating couplers based on 0.18-mu m complementary metal oxide semiconductor technology

Author:
Xu, Haihua  Li, Zhiyong  Zhu, Yu  Li, Yuntao  Yu, Yude  Yu, Jinzhong  


Journal:
OPTICAL ENGINEERING


Issue Date:
2011


Abstract(summary):

A silicon p-i-n diode Mach-Zehnder optical modulator integrated with grating couplers is fabricated in 0.18-mu m complementary metal oxide semiconductor technology. The device has an ultracompact length of 200 mu m. High modulation efficiency with a figure of merit of V(pi)L = 0.22 V mm is demonstrated. A novel pre-emphasis technique is introduced to achieve high-speed modulation, and a data transmission rate of 3 Gbps is present. (C) 2011 Society of Photo-Optical Instrumentation Engineers (SPIE). [DOI: 10.1117/1.3560264]


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