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Homoepitaxial n-core: p-shell gallium nitride nanowires: HVPE overgrowth on MBE nanowires

Author:
Sanders, Aric  Blanchard, Paul  Bertness, Kris  Brubaker, Matthew  Dodson, Christopher  Harvey, Todd  Herrero, Andrew  Rourke, Devin  Schlager, John  Sanford, Norman  Chiaramonti, Ann N.  Davydov, Albert  Motayed, Abhishek  Tsvetkov, Denis  


Journal:
NANOTECHNOLOGY


Issue Date:
2011


Abstract(summary):

We present the homoepitaxial growth of p-type, magnesium doped gallium nitride shells by use of halide vapor phase epitaxy (HVPE) on n-type gallium nitride nanowires grown by plasma-assisted molecular beam epitaxy (MBE). Scanning electron microscopy shows clear dopant contrast between the core and shell of the nanowire. The growth of magnesium doped nanowire shells shows little or no effect on the lattice parameters of the underlying nanowires, as measured by x-ray diffraction (XRD). Photoluminescence measurements of the nanowires show the appearance of sub-bandgap features in the blue and the ultraviolet, indicating the presence of acceptors. Finally, electrical measurements confirm the presence of electrically active holes in the nanowires.


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