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Electron transport in rubrene single-crystal transistors RID A-7097-2008 RID G-9009-2011

Author:
Bisri, Satria Zulkarnaen  Takenobu, Taishi  Takahashi, Tetsuo  Iwasa, Yoshihiro  


Journal:
APPLIED PHYSICS LETTERS


Issue Date:
2010


Abstract(summary):

We report a study of impurity effects on the electron transport of rubrene single crystals. A significant improvement of electron carrier mobility up to 0.81 cm(2)/V s is achieved by performing multiple purifications of single crystals and device aging inside an N(2)-filled glove box. The hole/electron mobility ratio obtained is in good agreement with the reported theoretical calculation, suggesting that the intrinsic electron transport of organic semiconductors is also exploitable in a manner similar to that of hole transport. (C) 2010 American Institute of Physics. [doi:10.1063/1.3419899]


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