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Preparation and Characterization of Cu(In,Ga)Se2 Thin Films Derived by Frequency Magnetron Sputtering

Author:: Huang, Y. W. Que, Wenxiu Zhang, J.
Journal:: FERROELECTRICS
Issue Date:: 2010
Abstract(summary):: Cu(In,Ga)Se2 thin films were deposited on glass substrate by co-sputtering technique from CuGa, In and Se targets in argon atmosphere. Influences of the sputtering power and the post-selenization on the structural, compositional and morphological properties of the Cu(In,Ga)Se2 thin films were investigated by X-ray diffraction, Energy-dispersive X-ray microanalysis, and scanning electron microscope. Results indicate that the atomic ratio of Cu, In, Ga and Se in the thin films can be controlled accurately by adjusting the sputtering power, and the Cu(In,Ga)Se2 thin films with a good crystalline feature and the atomic ratio of near CuIn0.7Ga0.3Se2 can be obtained by a post-selenization treatment at a temperature of 500 degrees C.
Page:: 110---117

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Preparation and Characterization of Cu(In,Ga)Se2 Thin Films Derived by Frequency Magnetron Sputtering

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