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A SnO(2) Nanopartiele/Nanobelt and Si Heterojunction Light-Emitting Diode RID A-1896-2010 RID A-2940-2010 RID A-2249-2011

Author:
Ling, Bo  Sun, Xiao Wei  Zhao, Jun Liang  Ke, Chang  Tan, Swee Tiam  Chen, Rui  Sun, Han Dong  Dong, Zhi Li  


Journal:
JOURNAL OF PHYSICAL CHEMISTRY C


Issue Date:
2010


Abstract(summary):

Single-crystalline zero-dimensional tin dioxide (SnO(2)) nanoparticles and one-dimensional SnO(2) nanobelts were synthesized on silicon (Si) substrates with different seed layer coatings by simple vapor-phase transport method. The crystal structure and morphology of the as-synthesized products were characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and Raman scattering spectroscopy. Both geometrically different nanostructures were further employed to fabricate the light-emitting diodes and showed dominant red and green emission bands at room temperature, which were ascribed to the deep defect states in SnO(2). However, SnO(2)-nanobelts-based light-emitting diodes showed another violet emission peaking at ca. 400 nm which was attributed to the shallow defect state related to the surface states/defects. The different emission performance between nanoparticle and nanobelts devices was attributed to the larger surface-to-volume ratio of the nanobelts, which was confirmed by the Raman and photoluminescence analysis. A thin SiO(2) intermediate layer was found to be crucial in achieving light emission from a n-SnO(2)/p-Si heterojunction with large valence band offset (ca. 2.96 eV), by which sufficient potential-energy difference can be maintained between SnO(2) and Si, thus facilitating the tunneling injection of holes.


Page:
18390---18395


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