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Short-Circuit Capability of SiC Buried-Gate Static Induction Transistors: Basic Mechanism and Impacts of Channel Width on Short-Circuit Performance

Author:
Yano, Koji  Tanaka, Yasunori  Yatsuo, Tsutomu  Takatsuka, Akio  Arai, Kazuo  


Journal:
IEEE TRANSACTIONS ON ELECTRON DEVICES


Issue Date:
2010


Abstract(summary):

Fundamental short-circuit operations of silicon carbide static induction transistors with buried-gate structures (BGSITs) were experimentally clarified, with subsequent device simulations. The impacts of channel width and source length on short-circuit capabilities were investigated. In particular, a design concept of the channel width was proposed to improve the short-circuit energy without a serious increase in ON-resistance. The maximum short-circuit capability of the fabricated BGSITs was 18 J/cm(2) at room temperature, which shows excellent performance compared with that of conventional Si insulated-gate bipolar transistors.


Page:
919---927


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