On the possibility of degradation-free field effect transistors RID A-6569-2008

Author:

Islam, Ahmad Ehteshamul  Alam, Muhammad Ashraful  

Journal:

APPLIED PHYSICS LETTERS

Issue Date:

2008

Abstract(summary):

Time-dependent change in threshold voltage, due to generation of interface/bulk traps, degrades drain current of field effect transistors. In this paper, we show-both theoretically and experimentally-the intriguing possibility of designing degradation-free transistors (with time-invariant drain current), where the degradation in threshold voltage is exactly compensated by improvement in mobility. Such transistors would reduce parametric reliability being a key concern for supply voltage scaling and thereby improve integrated circuit performance by minimizing the guard band voltage used in very large scale integrated circuit design. (c) 2008 American Institue of Physics.