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A new two-dimensional C-V model for prediction of maximum frequency of oscillation (f(max)) of deep submicron AlGaN/GaN HEMT for microwave and millimeter wave applications

Author:
Tyagi, Rajesh K.  Ahlawat, Anil  Pandey, Manoj  Pandey, Sujata  


Journal:
MICROELECTRONICS JOURNAL


Issue Date:
2008


Abstract(summary):

An analytical two-dimensional capacitance-voltage model for AlGaN/GaN high electron mobility transistor (HEMTs) is developed, which is valid from a linear to saturation region. The gate source and gate drain capacitances are calculated for 120nm gate length including the effects of fringing field capacitances. We obtain a cut-off frequency (f(T)) of 120 GHz and maximum frequency of oscillations (f(max)) of 160 GHz. The model is very useful for microwave circuit design and analysis. Additionally, these devices allow a high operating voltage V(DS), which is demonstrated in the present analysis. These results show an excellent agreement when compared with the experimental data. (c) 2008 Elsevier Ltd. All rights reserved.


Page:
1634---1641


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