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Effect of Si/C flux ratio on the growth of 3C-SiC on Si (111) by SSMBE

Author:
Liu, Z. L.  Liu, J. F.  Ren, P.  Xu, P. S.  


Journal:
PROCEEDINGS OF THE 17TH INTERNATIONAL VACUUM CONGRESS/13TH INTERNATIONAL CONFERENCE ON SURFACE SCIENCE/INTERNATIONAL CONFERENCE ON NANOSCIENCE AND TECHNOLOGY


Issue Date:
2008


Abstract(summary):

The effect of Si/C flux ratio on 3C-SiC grown on Si (111) by solid-source molecular beam epitaxy (SSMBE) is investigated by reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD), atomic force microscopy (AFM) and Fourier transform infrared spectroscopy (FTIR). The results indicate that there is an optimized Si/C flux ratio (1.5:1). In this case, besides SiC streaks, a (3x3) surface reconstruction can be observed in RHEED and the full width at half maximum (FWHM) of the rocking curve is 1.1 degrees. For the sample grown at lower Si/C flux ratio (1.1: 1), there are spots as well as ring patterns of SiC observed in RHEED and the FWHM of the rocking curve is 2.1. For the sample grown at higher Si/C flux ratio (2.3:1), the RHEED indicate that Si spots coexist with SiC spots and the result of the rocking curve shows the FWHM of 1.5 degrees. AFM results show that the surface of the sample grown at the optimized Si/C flux ratio is even and there are voids on the surface of the others. The results of FTIR indicate that the quality of the sample with optimized Si/C flux ratio is best. The more voids and defects of the samples with lower and higher Si/C flux ratios induce larger stress than that of the sample grown at optimized Si/C flux ratio (1.5: 1).


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