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Gate-controlled light emitting diodes RID F-5849-2010

Author:: Namdas, Ebinazar B. Swensen, James S. Ledochowitsch, Peter Yuen, Jonathan D. Moses, Daniel Heeger, Alan J.
Journal:: ADVANCED MATERIALS
Issue Date:: 2008
Abstract(summary):: The structure and operation of a gate-controlled LED is reported (see figure). The device is properly described as a unipolar organic transistor in series with an OLED. Light emission was visible with brightness exceeding 310cd m(-2) at external quantum efficiency of 0.5%; the brightness is controlled by the gate voltage.
Page:: 1321---+

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Gate-controlled light emitting diodes RID F-5849-2010

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