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Optical and structural properties of GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi-quantum wells RID H-5646-2011

Author:
Keller, S.  Schaake, C.  Fichtenbaum, N. A.  Neufeld, C. J.  Wu, Y.  McGroddy, K.  David, A.  DenBaars, S. P.  Weisbuch, C.  Speck, J. S.  Mishra, U. K.  


Journal:
JOURNAL OF APPLIED PHYSICS


Issue Date:
2006


Abstract(summary):

GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi-quantum wells (MQWs) were fabricated by holographic lithography and subsequent reactive ion etching. Etch related damage of the nanostructures was successfully healed through annealing in NH3/N-2 mixtures under optimized conditions. The nanopatterned samples exhibited enhanced luminescence in comparison to the planar wafers. X-ray reciprocal space maps recorded around the asymmetric (10 (1) over bar5) reflection revealed that the MQWs in both nanopillars and nanostripes relaxed after nanopatterning and adopted a larger in-plane lattice constant than the underlying GaN layer. The pillar relaxation process had no measurable effect on the Stokes shift typically observed in MQWs on c-plane GaN, as evaluated by excitation power dependent photoluminescence (PL) measurements. Angular-resolved PL measurements revealed the extraction of guided modes from the nanopillar arrays. (c) 2006 American Institute of Physics.


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