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Ambipolar organic field-effect transistors based on rubrene single crystals RID G-9009-2011

Author:
Takahashi, T  Takenobu, T  Takeya, J  Iwasa, Y  


Journal:
APPLIED PHYSICS LETTERS


Issue Date:
2006


Abstract(summary):

We herein report ambipolar organic field-effect transistors based on rubrene single crystals. The transistors operate in both the p- and n-channel regimes depending upon the bias conditions. Hole and electron mobilities of 1.8 and 1.1x10(-2) cm(2)/V s, respectively, were derived from saturated currents. The appearance of an electron enhancement mode in single crystals of wide-band-gap semiconductors (similar to 2.6 eV) is ascribed to the reduction of electron traps at the semiconductor-dielectric interface using a hydroxyl-free gate dielectric.


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