Reducing planar defects in 3C-SiC

Author:

Nagasawa, Hiroyuki  Yagi, Kuniaki  Kawahara, Takamitsu  Hatta, Naoki  

Journal:

CHEMICAL VAPOR DEPOSITION

Issue Date:

2006

Abstract(summary):

The planar defects that occur at the 3C-SiC/Si(001) interface can be classified as anti-phase boundary (APB) and stacking-fault (SF). In order to reduce SFs and APBs simultaneously, 3C-SiC is grown on undulant-Si in which the surface is covered with continuous slopes oriented in the [110] and [(11) over bar0] directions. This eliminates APBs at each slope of an undulation via step-flow epitaxy. In addition, SFs with an exposed C-face on the (001) surface (SFC) are eliminated via self-vanishing, while those with an exposed Si-face on the (001) surface (SFSi) form triangular shapes that expand with increasing 3C-SiC thickness. To remove any SFSi that cannot be eliminated on the undulant Si, an advanced SF reduction method involving homoepitaxial growth, called switch-back epitaxy (SBE), is investigated.

Page:

502---508