Creat membership Creat membership
Sign in

Forgot password?

Confirm
  • Forgot password?
    Sign Up
  • Confirm
    Sign In
Creat membership Creat membership
Sign in

Forgot password?

Confirm
  • Forgot password?
    Sign Up
  • Confirm
    Sign In
Collection
For ¥0.57 per day, unlimited downloads CREATE MEMBERSHIP Download

toTop

If you have any feedback, Please follow the official account to submit feedback.

Turn on your phone and scan

home > search >

[IEEE 2014 International Power Electronics Conference (IPEC-Hiroshima 2014 ECCE-ASIA) - Hiroshima, Japan (2014.5.18-2014.5.21)] 2014 International Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE ASIA) - Packaging for SiC power device

Author:
Funaki, Tsuyoshi  


Issue Date:
2014


Abstract(summary):

The wide band gap nature of SiC semiconductor makes high voltage power device possible to operate at high temperature. The high temperature operation of power device is expected to realize simplification of cooling system and miniaturizing the system size with smaller heat sink and/or less liquid cooling system. However, conventional plastic packaging for Si power device is designed to operate lower than 150 degC, which cannot be used for high temperature operation of SiC power device. Then, this paper develops the ceramic packaging for SiC power device to operate at extremely high temperature. The reliability of the developed ceramic package for long term high temperature exposure test and repetitive heat shock test results are introduced in the paper.


VIEW PDF

The preview is over

If you wish to continue, please create your membership or download this.

Create Membership

Similar Literature

Submit Feedback

This function is a member function, members do not limit the number of downloads