High responsivity, large-area plasmonic-enhanced nanostructure photodetector based on multilayer (ML) molybdenum disulfide (MoS2) deposited on p-type Silicon (Si) substrates is reported. A large area ML-MoS2 is deposited onto the Si photodetector (PD) using a modified membrane filtration method. This large area ML-MoS2 and Au NSs on the p-Si form a cavity-like structure that dramatically enhances the incident light path. The increase of incident light path due to light trapping effect enhances the electron-hole pair generation tremendously. The plasmonic-enhanced ML MoS2 on Si PD has achieved a stable and repeatable photoresponse up to 37 A W-1, whereas the detectivity is around 10(12) Jones at the broad wavelengths (405-780 nm) with a modulation frequency of 1 kHz. The enhancement of photoresponsivity is 8, 5.3 and 11 times with 5 V bias at an incident wavelength of 405 nm, 650 nm and 780 nm respectively as compared to the bare p-Si PD. The experimental results also show that the plasmonic-enhanced ML-MoS2 on Si PD exhibited fast photoresponse (rise time of similar to 1 mu s and fall time of similar to 18 mu s), which is much higher compared to typical transition metal dichalcogenide PD or single layer MoS2 based PD. These excellent performances show that the plasmonic-enhanced MoS2 structure is highly potential to apply in Si photovoltaics, visible range photodetection, and visible bio/chemical sensing application.
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