Ion beam etching (IBE) of dense and porous PZT thin films at various incidence angles of the Ar+ ions flux is studied. The dependence of the etch rate as a function of the Ar+ ions incidence angle demonstrates maximum value at 40 degrees for both dense and porous films. An angle of incidence of argon flux has an impact on microstructure of porous PZT film, in particular etching at the small incidence angle 5 degrees provides a smoothing effect as a result of in plane preferential etching and a reprecipitation effect. Defects after ions flux exposure influence electrical properties appearing as a dead layer on the interface, this effect becomes more pronounced after the following heat treatment.
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