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Growth of ferroelectric bismuth lanthanum nickel titanate thin films by rf magnetron sputtering

Author:
Kobune, Masafumi  Fukushima, Koji  Yamaji, Toru  Tada, Hideto  Yazawa, Tetsuo  Fujisawa, Hironori  Shimizu, Masaru  Nishihata, Yasuo  Matsumura, Daiju  Mizuki, Jun'ichiro  Yamaguchi, Hideshi  Kotaka, Yasutoshi  Honda, Koichiro  


Journal:
JOURNAL OF APPLIED PHYSICS


Issue Date:
2007


Abstract(summary):

The epitaxial growth, structural properties, and ferroelectric properties of bismuth lanthanum nickel titanate (Bi1-xLax) (Ni0.5Ti0.5)O-3 (BLNT) thin films deposited on Pt(100)/MgO(100) substrates by rf magnetron sputtering have been investigated using x-ray diffraction, transmission electron microscope, and polarization-electric field hysteresis loop measurements. The ferroelectric BLNT(00...) phase with c-axis orientation and a single-phase tetragonal perovskite structure appeared at x >= 0.3. The tetragonality (c/a) increased significantly from 1.004 to 1.028 with increasing La content. The fabricated BLNT films of x >= 0.3 indicated the apparent fourfold rotational symmetry observed for a MgO(202) substrate, a bottom Pt(202) electrode, and a BLNT(101) ferroelectric film, based on phi scan measurements. These results imply that the present La-substituted BLNT films are grown heteroepitaxially at x >= 0.3. It was confirmed that Bi in the BLNT films is in a trivalent state at A sites in the perovskite crystal, based on x-ray anomalous diffraction measurements and x-ray absorption near edge structure spectra. The sputtering technique using compacted powder targets designed by taking the bond dissociation energy of metal oxides into account provided epitaxial perovskite-structured BLNT thin films on Pt(100)/MgO(100) substrates. It is shown that the c-axis oriented epitaxial BLNT film exhibits a hysteresis loop shape with a P-r value of 12 mu C/cm(2) that is comparable to typical high-performance Bi3.25La0.75Ti3O12 (BLT) film. (c) 2007 American Institute of Physics.


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