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Structure-Property Correlations in a Ce-Doped (Lu,Gd)(2)SiO5:Ce Scintillator

Author:
Sidletskiy, Oleg  Belsky, Andrei  Gektin, Alexander  Neicheva, Svetlana  Kurtsev, Daniil  Kononets, Valerii  Dujardin, Christophe  Lebbou, Kheirreddine  Zelenskaya, Olga  Tarasov, Vladimir  Belikov, Konstantin  Grinyov, Boris  


Journal:
CRYSTAL GROWTH & DESIGN


Issue Date:
2012


Abstract(summary):

A full concentration range of Lu2xGd2-2xSiO5 (LGSO:Ce) crystals was grown by the Czochralski method. Dependence of the scintillation properties on composition (x) in the range of solid solutions is established. It was determined that the LGSO:Ce scintillation yield increases in the range 0.3 < x < 0.8 and reaches 29000 phot/MeV at 60% of Lu in the host (x = 0.6), and energy resolution improves up to 6.7% at 662 KeV. The observed light yield increase, surprisingly high Ce3+ segregation coefficients, improvement of energy resolution, and suppression of afterglow can be attributed to modification of both hot and thermalized diffusion of secondary electrons and holes induced by short-range separation in solid solution. The proposed approach can be valid for a wide range of mixed scintillation crystals and provides room for further improvement of their characteristics by isovalent substitution of host atoms.


Page:
4411---4416


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