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A study of low resistivity, deep diffused, silicon avalanche photodiodes coupled to a LaBr(3):Ce scintillator

Author:
McClish, M.  Farrell, R.  Glodo, J.  Shah, K. S.  


Journal:
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT


Issue Date:
2009


Abstract(summary):

Radiation Monitoring Devices (RMD) has modified their production of deep diffused, planar silicon avalanche photodiodes (APDs), which resulted in significant performance improvements. This modification involves an alternative planar process to influence the p-n junction contour to create a planar bevel while using 4 Omega cm n-type neutron transmutation-doped silicon wafers, where previously 30 Omega cm silicon wafers were used. These new APDs still offer a high gain (similar to 10(3)), but with an increased quantum efficiency and a reduced noise by a factor of 4-5, compared to our standard planar processed 30 Omega cm APDs with the same detection area. We have characterized these new devices for their intrinsic and spectroscopic properties. In our study a 14 x 14 mm(2) APD, made from 4 Omega cm silicon, was coupled to a 1 cm(3) LaBr(3):Ce scintillator. We measured a FWHM energy resolution at 662 keV to be 2.55% at room temperature (24 degrees C). (C) 2009 Elsevier BIN. All rights reserved.


Page:
207---209


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